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Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs

Published online by Cambridge University Press:  01 February 2011

Jun-Xian Fu ,
Xiaojun Yu ,
Yu-Hsuan Kuo  and
James S Harris Jr
Jun-Xian Fu
Affiliation:
Department of Applied Physics, Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305-4075, U.S.A.
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Abstract

Strain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), roomtemperature photoluminesecence (RTPL) and optical absorption measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 883: Symposium FF – Advanced Devices and Materials for Laser Remote Sensing , 2005 , FF6.2
Copyright
Copyright © Materials Research Society 2005

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References

References:

1 Drennen, J. K., Kraemer, E. G., Lodder, R. A., Crit. Rev. Anal. Chem. 22, 443 (1991).Google Scholar
2 Freund, L. B. and Suresh, S., “Thin Film Materials: Stress, Defect Formation and Surface Evolution”, (Cambridge University Press, 2003) pp. 387–463.Google Scholar
3 Tundo, S., Mazzer, M., Nasi, L., Lazzarini, L., Salviati, G., Rohr, C., Abbott, P., Bushnell, D. B., Barnham, K. W. J., Clarke, G., Peng, R., J. Appl. Phys. 94, 6341 (2003).Google Scholar
4 Jourba, S., Gendry, M., marty, O., pitaval, M., Hollinger, G., Appl. Phys. Lett. 75, 220 (1999).Google Scholar
5 Nguyen, L. D., Brown, A. S., Thompson, M. A., Jelloian, L. M., IEEE Transactions on Electron Devices, 39, 2007–2014 (1992)Google Scholar
6 Snyder, C. W., Orr, B. G., Kessler, D., Sander, L. M., Phys. Rev. Lett. 66, 3032–3035 (1991)Google Scholar
7 Priolo, F., Coffa, S., Franzo, G., Spinella, C., Carnera, A., Bellani, V., J. Appl. Phys. 74, 4936–4942 (1993)Google Scholar