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Near-field photoluminescence spectroscopy of InGaN quantum dots

Published online by Cambridge University Press:  01 February 2011

Alexander Mintairov ,
J. Merz ,
D. Sizov ,
V. Sizov ,
V. Lundin ,
S. Usov ,
E. Zavarin ,
A. Tsatsul'nikov ,
Yu. Musikhin  and
A. Vlasov
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Alexander Mintairov
Affiliation:
[email protected], University of Notre Dame, EE Department, University of Notre Dame, Notre Dame, IN, 46556, United States, 574 9333
J. Merz
Affiliation:
[email protected]
D. Sizov
Affiliation:
[email protected]
V. Sizov
Affiliation:
[email protected]
V. Lundin
Affiliation:
[email protected]
S. Usov
Affiliation:
[email protected]
E. Zavarin
Affiliation:
[email protected]
A. Tsatsul'nikov
Affiliation:
[email protected]
Yu. Musikhin
Affiliation:
[email protected]
A. Vlasov
Affiliation:
[email protected]
N. Ledentsov
Affiliation:
[email protected]
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Abstract

We used temperature dependent near-field magneto-photoluminescence spectroscopy to study emission properties of blue-green InGaN quantum dot (QD) structures with spatial resolution of ∼ 100 nm. The QD structures grown by MOCVD are 3 nm thick In0.12Ga0.88N layers, confined by GaN and In0.04Ga0.96N and containing a dense array of few nanometer size In-rich areas. The spectral features related to single QDs of the lateral size ∼3 and ∼30 nm and the QD ensemble have been identified. The regions of localization of the shallow and deep QD were spatially resolved in temperature dependent spectra. The spatial delocalization of the emission of the deep QDs at T<90 K have been observed.

Keywords

nitridenanostructureluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF32-06
Copyright
Copyright © Materials Research Society 2006

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