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Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire

Published online by Cambridge University Press:  21 February 2011

A. Hangleiter ,
J. S. Im ,
T. Forner ,
V. Härle  and
F. Scholz
A. Hangleiter
Affiliation:
4. Physikalisches Institut, Universität Stuttgart D-70550 Stuttgart, Germany E-mail: [email protected]
J. S. Im
Affiliation:
4. Physikalisches Institut, Universität Stuttgart D-70550 Stuttgart, Germany E-mail: [email protected]
T. Forner
Affiliation:
4. Physikalisches Institut, Universität Stuttgart D-70550 Stuttgart, Germany E-mail: [email protected]
V. Härle
Affiliation:
4. Physikalisches Institut, Universität Stuttgart D-70550 Stuttgart, Germany E-mail: [email protected]
F. Scholz
Affiliation:
4. Physikalisches Institut, Universität Stuttgart D-70550 Stuttgart, Germany E-mail: [email protected]
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Abstract

Using picosecond time-resolved photoluminescence we have studied the decay time of excess carriers in GaN epitaxial layers over a wide range of temperatures from 4 K up to 400 K. At low temperature, a thermal dissociation of donor-bound excitons is observed. At higher temperatures up to room temperature, the luminescence decay at moderate excitation is governed by trapping of photogenerated electrons in ionized shallow donor levels. Using measured luminescence intensities to determine the quantum efficiency, we obtain the radiative lifetime of free excitons from low temperature up to room temperature. We use these data to determine the radiative recombination coefficient and the interband momentum matrix element.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 559
Copyright
Copyright © Materials Research Society 1996

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References

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