Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:49:32.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Nano-Tubes in GaN

Published online by Cambridge University Press:  10 February 2011

Z. Liliental-Weber ,
Y. Chen ,
S. Ruvimov ,
W. Swider  and
J. Washburn
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
Y. Chen
Affiliation:
Hewlett Packard, Palo Alto, CA
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
W. Swider
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
Get access

Abstract

Formation of vertical hollow nano-tubes in GaN grown on different substrates using different growth methods is described. These defects are shown to be of several different types, some related to threading dislocations, but others originating at tubular inversion domains, or crystal inhomogeneities. Kinetic mechanism based on slow growth rate on polar {0111} surfaces is proposed to explain the origin of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 417
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn. J. Appl. Phys. 34, L979 (1995).Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett., 64, 1687 (1994).Google Scholar
3. Amano, H., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 27, L1384 (1988).Google Scholar
4. Moustakas, T.D. and Molnar, R.J., Mat. Res. Soc. Conf. Proc. 281, 753 (1993).Google Scholar
5. Wang, C. and Davis, R.F., Appl.Phys. Lett. 63, 990 (1993).Google Scholar
6. Newman, N., Ross, J. and Rubin, M., Appl. Phys. Lett. 62, 1242 (1993).Google Scholar
7. Liliental-Weber, Z., Sohn, H., Newman, N., and Washburn, J., “Electron Microscopy Characterization of GaN Grown by MBE on Sapphire and SiC”, J. Vac. Sci. Technol B 13 (4), 1578 (1995).Google Scholar
8. Liliental-Weber, Z., Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washburn, J., Newman, N., Gassmann, A., Liu, X., Schloss, L., Weber, E.R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., Pakula, K., Baranowski, J., Porowski, S., Amano, H., and Akasaki, I., Mat. Res. Soc.Symp. Proc. vol. 395, 351 (1996).Google Scholar
9. Liliental-Weber, Z., Ruvimov, S., Suski, T., Ager, J.w. III, Swider, W., Washburn, J., Amano, H., Akasaki, I., Imler, W., “Effect of Si-doping on the Structure of GaN,” Mat. Res. Soc. Meeting, San Francisco, CA, vol. 423, (1996) in press.Google Scholar
10. Ponce, F.A., Frusor, B.S., Major, J.S. Jr., Piano, W.E., and Welch, D.F., Appl. Phys. Lett., 67, 410 (1995).Google Scholar
11. Lester, S.D., Ponce, F.A., Craford, M.G., and Steigerwald, D.A., Appl. Phys. Lett., 66, 1249 (1995).Google Scholar
12. Qian, W., Rohrer, G.S., Skowronski, M., Doverspike, K., Rowland, L.B., and Gaskill, D.K., Appl. Phys. Lett. 67, 2284 (1995).Google Scholar
13. Qian, W., Skowronski, M., Doverspike, K., Rowland, L.B., and Gaskill, D.K., J. Cryst. Growth 151, 396 (1995).Google Scholar
14. Qian, W., Skowronski, M., and Rohrer, G.S., Mat. Res. Soc. Mat. (1996).Google Scholar
15. Bhide, V.G., Physica 24, 817 (1958).Google Scholar
16. Hobgod, H.M., Barret, D.L., McHugh, J.P., Clarke, R.C., Sriram, S., Burk, A.A., Greggi, J., Brandt, C.D., Hopkins, R.H., and Choyke, W.J., J. Crystals Growth, 137, 181 (1994).Google Scholar
17. Heindl, J. and Strunk, H.P., Phys. Stat. Sol. 193, K1 (1996).Google Scholar
18. Powell, J.A., Neudeck, P.G., Larkin, D.J., Yang, J.W., and Pirouz, P., Inst. Phys. Conf. Ser., 137, 161 (1994).Google Scholar
19. Koynov, S., Topf, M., Fiscer, S., Meyer, B.K., Radojkovic, P., Hartman, E., and Liliental-Weber, Z., to be published (1996).Google Scholar
20. Liliental-Weber, Z, International School on Semiconductor Physics, May 1995, Jaszowiec, Poland (invited talk -nopaper).Google Scholar
21. Liliental-Weber, Z., Kisielowski, C., Liu, X., Schloss, L., Washburn, J., Weber, E.R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., and Porowski, S., Topical workshop on III-V Nitrides, Nagoya, September (1995)-Solid State Electr. in printGoogle Scholar
22. Liliental-Weber, Zuzanna, Kisielowski, C., Ruvimov, S., Chen, Y., Washburn, J., Grzegory, I., Bockowski, M., Jun, J., and Porowski, S., J. Electr. Mat. vol. 25 #9, 1545–50 (1996).Google Scholar
23. Ponce, F.A., Bour, D.P., Young, W.T., Saunders, M., and Steeds, J.W., Appl. Phys. Lett. 69, 337 (1996).Google Scholar
24. Frank, F.C., Acta Cryst. 4, 497 (1951).Google Scholar
25. Daudin, B.. Rouviere, J.L., and Arlery, M., Appl. Phys. Lett., 69, 2480 (1996).Google Scholar