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Nanostructured Telluride Films on Macroporous Silicon for High Efficiency Thermoelectric Devices

Published online by Cambridge University Press:  14 March 2011

Hans D. Robinson ,
Ofer Sneh  and
Vladimir Kochergin
Hans D. Robinson
Affiliation:
Department of Physics, Virginia Tech, Blacksburg, VA 24061
Ofer Sneh
Affiliation:
Sundew Technologies, Broomfield, CO 80020
Vladimir Kochergin
Affiliation:
MicroXact, Inc., Blacksburg, VA 24060
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Abstract

We propose using macroporous silicon as an ultra-high aspect ratio scaffolding for epitaxially grown thermoelectric materials, so that thin films can be shaped into materials thick enough for practical devices. The self-limiting nature of atomic layer deposition (ALD) makes it an ideal growth technique for this substrate, as uniform thickness can be obtained at all points inside the macroporous structure, and we demonstrate successful deposition of antimony telluride on pore walls using ALD. Extension of this work to telluride superlattices should enable fabrication of thermoelectric devices with figures of merit (ZT) in excess of 2. Characterization of the thermoelectric and other properties of ALD grown telluride on silicon is ongoing.

Keywords

thermoelectricporosityepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1314: Symposium LL – Thermoelectric Materials for Solid-State Power Generation and Refrigeration , 2011 , mrsf10-1314-ll05-14
Copyright
Copyright © Materials Research Society 2011

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References

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