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Nanostructuration of Cr/Si layers induced by ion beam mixing

Published online by Cambridge University Press:  22 February 2013

L. Luneville ,
L. Largeau ,
C. Deranlot ,
N. Moncoffre ,
Y. Serruys ,
F. Ott ,
G. Baldinozzi  and
D. Simeone
L. Luneville
Affiliation:
DEN/DANS/DM2S/SERMA/LLPR/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
L. Largeau
Affiliation:
LPN-UPR20/CNRS, Route de Nozay, 91460 Marcoussis, France
C. Deranlot
Affiliation:
Unité Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
N. Moncoffre
Affiliation:
IPNL-IN2P3, 69622 Villeurbanne, France
Y. Serruys
Affiliation:
DEN/DANS/DMN/SRMP, CEA Saclay, 91191 Gif-sur-Yvette, France
F. Ott
Affiliation:
DSM/IRAMIS/LLB, CEA Saclay, 91191 Gif-sur-Yvette, France
G. Baldinozzi
Affiliation:
CNRS-SPMS/UMR 8580/ LRC CARMEN Ecole Centrale Paris, 92295 Châtenay-Malabry, France
D. Simeone
Affiliation:
DEN/DANS/DMN/SRMA/LA2M/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
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Abstract

This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.

Keywords

ion beam analysismicrostructureradiation effects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1514: Symposium HH – Advances in Materials for Nuclear Energy , 2013 , pp. 61 - 68
Copyright
Copyright © Materials Research Society 2013 

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References

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