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Nanoscale Transistors: Physics and Materials

Published online by Cambridge University Press:  01 February 2011

Mark S. Lundstrom ,
Kurtis D. Cantley  and
Himadri S. Pal
Mark S. Lundstrom
Affiliation:
[email protected], Purdue University, Electrical and Computer Engineering, EE Building, Room 310,, 465 Northwestern Ave., West Lafayette, IN, 47907-2035, United States
Kurtis D. Cantley
Affiliation:
[email protected], Purdue University, Network for Computational Nanotechnology, Dept. of Electrical and Computer Engineering, West Lafayette, IN, 47907, United States
Himadri S. Pal
Affiliation:
[email protected], Purdue University, Network for Computational Nanotechnology, Dept. of Electrical and Computer Engineering, West Lafayette, IN, 47907, United States
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Abstract

We analyze a modern-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as high-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.

Keywords

devicesmicroelectronicsnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L06-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. ITRS report on Process Integration, Devices and Modeling, 2005 edition, at http://www.itrs.netGoogle Scholar
2. Khakifirooz, A. and Antoniadis, D. A., to be published in IEDM Tech. Dig. (2006)Google Scholar
3. Lundstrom, M. S. and Guo, J., Nanoscale Transistors: Device Physics, Modeling, and Simulation, 1st Ed. (Springer, New York, 2005) pp. 83–113 Google Scholar
4. Blakemore, J.S., Semiconductor Statistics, Dover, 1987 Google Scholar
5. Tyagi, S., Auth, C., Bai, P., Curello, G., Deshpande, H., Gannavaram, S., Golonzka, O., Heussner, R., James, R., Kenyon, C., Lee, S–H., Lindert, N., Liu, M., Nagisetty, R., Natarajan, S., Parker, C., Sebastian, J., Sell, B., Sivakumar, S., Amour, A. St, Tone, K., IEDM Tech. Dig. (2005), pp. 1070–1072 Google Scholar
6. Simulations were performed using Schred on http://www.nanohub.orgGoogle Scholar
7. Uchida, K., Krishnamohan, T., Saraswat, K. C., and Nishi, Y., IEDM Tech. Dig. (2005), pp. 129–132 Google Scholar
8. Chau, R., Datta, S., Majumdar, A., Compound Semiconductor Integrated Circuit Symp. (2005), pp. 4–7 Google Scholar
9. Ng, K. K., Rafferty, C. S., Cong, H., IEDM Tech. Dig. (2001), pp. 31.5.1–31.5.4Google Scholar