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Nanoscale Thermal Property of Amorphous SiC: A Molecular Dynamics Study

Published online by Cambridge University Press:  01 February 2011

Weiqiang Wang ,
Rajiv K. Kalia ,
Aiichiro Nakano  and
Priya Vashishta
Weiqiang Wang
Affiliation:
[email protected], University of Southern California, Collaboratory for advanced computing and simulations, 3651 Watt. Way, 608, Los Angeles, CA, 90089, United States, 213 821-6301, 213 821-6301
Rajiv K. Kalia
Affiliation:
[email protected], University of Southern California, Collaboratory for Advanced Computing and Simulations, Los Angeles, CA, 90089, United States
Aiichiro Nakano
Affiliation:
[email protected], University of Southern California, Collaboratory for Advanced Computing and Simulations, Los Angeles, CA, 90089, United States
Priya Vashishta
Affiliation:
[email protected], University of Southern California, Collaboratory for Advanced Computing and Simulations, Los Angeles, CA, 90089, United States
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Abstract

Thermal properties of amorphous silicon carbide (a-SiC) at nanometric scales are studied by molecular dynamics (MD) simulations based on an empirical interatomic potential. A scalable parallel MD algorithm is used for studying systems as long as 30nm. To validate the potential, phonon density of states and specific heat of a-SiC are first calculated. Size effects are studied, and errors are estimated for the temperature profile for different system sizes. Simulation time required to achieve steady temperature profiles is also determined. Finally the thermal conductivities of a-SiC at various temperatures are calculated. The results show that thermal conductivities of a-SiC at nanometric scale also agree with Slack's minimum thermal conductivity model.

Keywords

thermal conductivitynanoscaleamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1022: Symposium II – Nanoscale Heat Transport–From Fundamentals to Devices , 2007 , 1022-II05-10
Copyright
Copyright © Materials Research Society 2007

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References

1. Yamada, K. and Mohri, M., in Silicon Carbide Ceramics -1 edited by Somiya, S. and Inomata, Y. (Elsevier, London, 1991)Google Scholar
2. Schmid, U., Eickhoff, M., Richter, C., Krotz, G., Schmitt-Landsiedel, D., Sens. and Act. A 94 87 (2001)Google Scholar
3. Cahill, D. G., Ford, W.K., Goodson, K.E., et al, J. Appl. Phys. 93 793 (2003) and the reference thereinGoogle Scholar
4. Shimojo, F., Ebbsjo, I., Kalia, R.K., Nakano, A., Rino, J. P., and Vashishta, P., Phys. Rev. Lett. 84 3338 (2000)Google Scholar
5. Szlufarska, I., Kalia, R. K., Nakano, A. and Vashishta, P., App. Phys. Lett. 85 378 (2004)Google Scholar
6. Szlufarska, I., Kalia, R. K., Nakano, A. and Vashishta, P., App. Phys. Lett. 86 021915 (2005)Google Scholar
7. Szlufarska, I., Nakano, A., and Vashishta, P., Science 309 911 (2005)Google Scholar
8. Jund, P. and Jullien, R., Phys. Rev. B 59 13707 (1999)Google Scholar
9. Rino, J. P., Ebbsjo, I., Branicio, P. S., Kalia, R. K., Nakano, A., Shimojo, F. and Vashishta, P., Phys. Rev. B 70 045207 (2004)Google Scholar
10. Vashishta, P., Kalia, R. K., Nakano, A., Rino, J.P., J. Appl. Phys., in pressGoogle Scholar
11. Nakano, A., Vashishta, P., and Kalia, R. K., ibid, 77 302 (1993)Google Scholar
12. Schelling, P. K., Phillpot, S. R., and Keblinski, P., Phys. Rev. B 65 144306 (2002)Google Scholar
13. Maiti, A., Mahan, G. D., and Pantelides, S. T., Solid Stat. Comm. 102 517 (1997)Google Scholar
14. Cahill, D. G. and Pohl, R. O., Phys. Rev. B 35 4067 (1987)Google Scholar