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Nano-Scale Resolved Detection of Photo-Current in a-Si:H Films

Published online by Cambridge University Press:  10 February 2011

Takashi Koida ,
Masashi Kawasaki ,
Ryuichiro Maruyama ,
Mitsutaka Matsuse  and
Hideomi Koinuma
Takashi Koida
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan
Masashi Kawasaki
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan
Ryuichiro Maruyama
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan
Mitsutaka Matsuse
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan
Hideomi Koinuma
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan
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Abstract

The growth mode of a-Si:H plasma CVD film was observed by AFM to range from homogeneous deposition to heterogeneous island formation depending on the substrate material and deposition temperature. The correlation between the grain-like structure and electric property of the film deposited on transparent conductive SnO2, substrates has been elucidated by using an AFM with a conductive cantilever. The local distribution of photo-current in the a-Si:H films was found to agree well with the topographic image; the photo-current around the grain boundaries was lower than that on the grains. The effect of surface treatment with an aqueous HF solution indicates that the imhomogeneity in the photo-current originates from the preferential oxidation around the grain boundaries rather than intrinsic electric property.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 895
Copyright
Copyright © Materials Research Society 1996

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