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Nanoscale Pattern Transfer Using Sputter-Induced Corrugations Formed at the Si/SiO2 Interface

Published online by Cambridge University Press:  15 March 2011

Cary G. Allen ,
Matthew Daniels ,
Christopher C. Umbach  and
Jack M. Blakely
Cary G. Allen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
Matthew Daniels
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
Christopher C. Umbach*
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
Jack M. Blakely
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
*
cAuthor to whom correspondence should be addressed; [email protected]
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Abstract

A conventional ion mill used for thinning transmission electron microscope samples has been used to produce nanoscale surface corrugations on the thermal oxide of Si. Using Ar ions with energies from 1.1 to 2.5 keV in an off-normal incidence geometry, the corrugations were produced with wavelengths from 30 to 80 nm and amplitudes of ~1 to 2 nm. The corrugated pattern in the oxide has been transferred to the underlying Si substrate by reactive ion etching, producing structures that have a much higher aspect ratio than the original corrugations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y4.8
Copyright
Copyright © Materials Research Society 2002

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Footnotes

a

Present address: Dept. of Applied Physics, Mesa State College, Grand Junction, CO

b

Present address: Dept. of Physics, Pacific Lutheran University, Tacoma, WA

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