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Nanorods as a precursor for high quality GaN layers
Published online by Cambridge University Press: 01 February 2011
Abstract
The density of threading dislocations in GaN/(0001)sapphire films grown by molecular beam epitaxy can be reduced to about 108 cm−2 by growing an intermediate nanorod layer. This paper examines the growth of the nanorods and proposes that threading defects in the overlayer arise either through grain boundaries formed when nanorods coalesce, or through the propagation of dislocation dipoles seen during nanorod growth. Results showing that the latter often terminate or develop into voids during growth are discussed.
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- Copyright © Materials Research Society 2009
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