Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-07T21:15:51.053Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoporous Silica for Low k Dielectrics

Published online by Cambridge University Press:  15 February 2011

Teresa Ramos ,
Kevin Roderick ,
Alok Maskara  and
Douglas M. Smith
Teresa Ramos
Affiliation:
Nanoglass LLC, 3500 Garrett Ave., Santa Clara, CA 95054–2827, USA
Kevin Roderick
Affiliation:
Nanoglass LLC, 3500 Garrett Ave., Santa Clara, CA 95054–2827, USA
Alok Maskara
Affiliation:
Nanoglass LLC, 3500 Garrett Ave., Santa Clara, CA 95054–2827, USA
Douglas M. Smith
Affiliation:
Nanoglass LLC, 3500 Garrett Ave., Santa Clara, CA 95054–2827, USA
Get access

Abstract

Considerable progress has been made in development of thin films of nanoporous silica (also known as aerogels or low density xerogels) for ILD and IMD applications. Advantages of these materials include high thermal stability, small pore size, and similarity to conventional deposition processes, precursors and final material (silica). We have previously reported success in synthesizing low density, low dielectric constant (K<2) thin films using ambient pressure processing. However, processing of those films was complicated due to large number of process steps and difficulties in independently controlling both film thickness and film porosity.

Nanoglass has now developed a new process which considerably reduces the number of process steps and allows independent control of both film thickness and porosity. The dielectric constant of the films can be tailored between 1.3 and 2.5. These films have improved mechanical properties due to controlled pore size and narrow pore size distribution and also because of higher density. The trade-offs between density, mechanical strength and dielectric constant for these types of porous solids will be elucidated. The known properties of the film and the process flow for deposition and post-deposition curing and the role of the relative rates of reaction, gelation, aging, and drying will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 91
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 The National Technology Roadmap for Semiconductors, SIA, San Jose, CA (1994)Google Scholar
2 Hrubesh, L.W., Keene, L.E., and Latorre, V.R., J. Mater.Res., 8, 1736, (1993).Google Scholar
3 Bruesch, P., Stucki, F., Baumann, T., Kluge-Weiss, P., Bruhl, B., Niemeyer, L., Strumpler, R., Ziegler, B., Mielke, M., Appl. Phys., A 57, 329 (1993)Google Scholar
4 Smith, D. M., Anderson, J.M., Cho, C.C. and Gnade, B.E., Advances in Porous Materials, edited by Komareni, S., Smith, D.M. and Beck, J.S., Mater.Res.Soc. 371, 261, Pittsburgh, PA, 1995.Google Scholar
5 Smith, D.M., Anderson, J. M., Cho, C.C., Johnston, G.P., and Jeng, S.P., Low Dielectric Constant Materials, Mater.Res.Soc. 381, 261, Pittsburgh, PA, 1995.Google Scholar
6 Cho, C.C., Gnade, B., Smith, D.M., US patents #5,470,802, #5,494,858, #5,504,042, #5,523,615 (1995)Google Scholar
7 Ramos, T., Roderick, K., Maskara, A., and Smith, D.M., Advanced Metallization and Interconnect Systems for ULSI Applications, 1996, MRS, in press.Google Scholar
8 Desphande, R., Smith, D. M., Brinker, C.J., U.S. Patent 5,565,142, (1996)Google Scholar
9 Patents pendingGoogle Scholar