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Nanopatterning of GaAs(110) vicinal surfaces by hydrogen-assisted MBE

Published online by Cambridge University Press:  01 February 2011

M. L. Crespillo ,
J. L. Sacedón ,
B. A. Joyce  and
P. Tejedor
M. L. Crespillo
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
J. L. Sacedón
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
B. A. Joyce
Affiliation:
Department of Physics, Imperial College London, Blackett Laboratory, London SW7 2AZ, United Kingdom
P. Tejedor
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
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Abstract

The effect of atomic hydrogen on the growth mode and surface morphology of GaAs(110) thin films grown by molecular beam epitaxy (H-MBE) has been studied for different kinetic regimes using atomic force microscopy (AFM). Growth in the Ga supply-limited regime after H-assisted oxide removal leads to the formation of multi-atomic step arrays by step bunching with a very uniform terrace size distribution in the 80 nm range. Growth under As-deficient conditions after H-assisted oxide removal induces a rapid self-organization of the GaAs(110) surface into a ridge pattern along the <001> tilt direction, which is broken down into a 3D mound morphology when H is also present during growth. A chacteristic nanofacetting of the surface with very straight <1–10> -type steps is observed at high temperatures regardless of atomic hydrogen being used during oxide desorption and/or epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK7.1
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1] Tejedor, P., Allegretti, F.E., Šmilauer, P., Joyce, B.A., Surf. Sci., 407, 82 (1998)Google Scholar
[2] Tejedor, P., Šmilauer, P., Joyce, B.A., Microelectronics J. 30, 477 (1999)Google Scholar
[3] Tejedor, P., Šmilauer, P., Joyce, B.A., Surf. Sci. 429, L309 (1999)Google Scholar
[4] Bales, G.S. and Zangwill, A., Phys. Rev. B 41, 5500 (1990)Google Scholar
[5] Tejedor, P., Šmilauer, P., Roberts, C., Joyce, B.A., Phys. Rev. B 59, 2341 (1999)Google Scholar
[6] Nötzel, R., Schönherr, H.P., Niu, Z., Däweritz, L., Ploog, K.H., J. Crys. Growth 201/02, 814 (2001)Google Scholar
[7] Nötzel, R., Ploog, K.H., J. Crys. Growth 227, 8 (2001)Google Scholar
[8] Wright, A.F., Fong, C.Y., Batra, I.P., Surf. Sci. 244, 51 (1991)Google Scholar
[9] Rost, M., Šmilauer, P., Krug, J., Surf. Sci. 369, 393 (1996)Google Scholar