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Nanofabrication of Vertically Aligned Carbon Nanofibers for Contact Characterization

Published online by Cambridge University Press:  01 February 2011

Yusuke Ominami ,
Quoc Ngo ,
Makoto Suzuki ,
Kevin Mcilwrath ,
Konrad Jarausch ,
Alan M Cassell ,
Jun Li  and
Cary Y Yang
Yusuke Ominami
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States, 408-554-6817
Quoc Ngo
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
Makoto Suzuki
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
Kevin Mcilwrath
Affiliation:
[email protected], Hitachi High Technologies America, Pleasanton, CA, 94588, United States
Konrad Jarausch
Affiliation:
[email protected], Hitachi High Technologies America, Pleasanton, CA, 94588, United States
Alan M Cassell
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Moffett Field, CA, 94035, United States
Jun Li
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Moffett Field, CA, 94035, United States
Cary Y Yang
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
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Abstract

Recent studies in nanostructural characterization for on-chip interconnect applications using carbon nanofibers (CNFs) are presented. In this paper, we propose a novel technique, for the purpose of characterizing interfacial structures of vertically aligned CNFs for cross-sectional imaging with scanning transmission electron microscopy (STEM). In this technique, vertically aligned CNFs are selectively grown, by plasma-enhanced chemical vapor deposition (PECVD), on a substrate comprising a narrow strip (width ~100nm) fabricated by focused ion beam (FIB). Using high-resolution STEM, we show that CNFs with diameters ranging from 10 -100 nm exhibit very similar graphitic layer morphologies at the base contact interface.

Keywords

scanning transmission electron microscopy (STEM)ion-beam processingnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T05-04
Copyright
Copyright © Materials Research Society 2006

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