Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:16:59.223Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanocrystallites of Si Embedded in CaF2 by Molecular Beamepitaxy (MBE)

Published online by Cambridge University Press:  28 February 2011

A. P. Taylor ,
K. Stokes ,
Z. C. Wu ,
P. D. Persans ,
L. J. Schowalter  and
F. K. LeGoues
A. P. Taylor
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
K. Stokes
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
Z. C. Wu
Affiliation:
Rensselaer and Oakridge National Lab., Oakridge, TN
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
L. J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
F. K. LeGoues
Affiliation:
IBM, Yorktown Heights, New York 10598
Get access

Abstract

Thin films of CaF2 containing layers of Si nanocrystals were grown epitaxially on Si(111) substrates by MBE. When Si is deposited epitaxially on CaF2 it forms islands and, by choosing appropriate growth conditions, a composite of Si nanocrystals embedded in a CaF2 host crystal is obtained which we have observed with TEM. We varied the effective Si concentration in the composite region from 1% to 25%. The CaF2 could be grown with high crystal quality as demonstrated by ion channeling results which gave Ca xmin's as low as 4.7%. Raman spectra of the CaF2 containing Si nanocrystallites showed significant shifts toward lower energies. EUipsometry measurements were performed on a number of samples over a range of effective Si concentrations and Maxwell-Garnett effective medium theory was used to fit the data. A key technological advantage to this approach is that the epitaxial Si/CaF2 composite material is readily integrable into VLSI processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 71
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wang, Y. and Herron, N., J. Phys. Chem., 95, 525, 1991.Google Scholar
[2] Steigerwald, M. L. and Brus, L. E., Ace. Chem. Res., 23, 183, 1990.Google Scholar
[3] Canham, L. T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
[4] See for example, MRS Symp. Proc. vol. 256, editors, Iyer, S. S., Collins, R. T., and Canham, L. T., 1992.Google Scholar
[5] Schowalter, L. J., Mat. Res. Soc. Symp. Proc, vol. 116, 3 (1988).Google Scholar
[6] Fathauer, R. W., Lewis, N., Hall, E. L., and Schowalter, L. J., J. Appl. Phys., 60, 3886 (1986).Google Scholar
[7] Fauchet, P. M. and Campbell, I. M., Crit. Rev. Sol. Stat. Mat. Sci., 14, 579 (1988).Google Scholar
[8] Langford, A. A., Fleet, M. L., Nelson, A. J., Asher, S. E., Goral, J. P., and Mason, A., J. Appl. Phys., 65, 5145 (1989).Google Scholar
[9] Anastassakis, E., Pinezak, A., Burstein, E., Pollak, F. H., and Cardona, M., Sol. Stat. Comm., 8, 133 (1970).Google Scholar
[10] Wu, Z. C., Arakawa, E. T., Jimenez, J. R., and Schowalter, L. J., J. Appl. Phys. 71, 5601 (1992).Google Scholar