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Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

Published online by Cambridge University Press:  01 February 2011

Sang-Myeon Han ,
Joong-Hyun Park ,
Hye-Jin Lee ,
Kwang-Sub Shin  and
Min-Koo Han
Sang-Myeon Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: [email protected]
Joong-Hyun Park
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: [email protected]
Hye-Jin Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: [email protected]
Kwang-Sub Shin
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: [email protected]
Min-Koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: [email protected]
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Abstract

Nanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A19.9
Copyright
Copyright © Materials Research Society 2005

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