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Mutual Passivation in Dilute GaNxAs1-x Alloys

Published online by Cambridge University Press:  01 February 2011

K. M. Yu ,
W. Walukiewicz ,
J. Wu ,
D. E. Mars ,
M. A. Scarpulla ,
O. D. Dubon ,
M. C. Ridgway  and
J. F. Geisz
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Wu
Affiliation:
Dept. Chemistry and Chemical Biology, Harvard University, Cambridge, MA
D. E. Mars
Affiliation:
Agilent Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
M. A. Scarpulla
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
O. D. Dubon
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
M. C. Ridgway
Affiliation:
Australian National University, Canberra, Australia
J. F. Geisz
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
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Abstract

The dilute GaNxAs1-x alloys (with x up to 0.05) have exhibited many unusual properties as compared to the conventional binary and ternary semiconductor alloys. We report on a new effect in the GaNxAs1-x alloy system in which electrically active substitutional group IV donors and isoelectronic N atoms passivate each other's activity. This mutual passivation occurs in dilute GaNxAs1-x doped with group IV donors through the formation of nearest neighbor IVGa- NAs pairs when the samples are annealed under conditions such that the diffusion length of the donors is greater than or equal to the average distance between donor and N atoms. The passivation of the shallow donors and the NAs atoms is manifested in a drastic reduction in the free electron concentration and, simultaneously, an increase in the fundamental bandgap. This mutual passivation effect is demonstrated in both Si and Ge doped GaNxAs1-x alloys. Analytical calculations of the passivation process based on Ga vacancy mediated diffusion show good agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E8.1
Copyright
Copyright © Materials Research Society 2005

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