Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T18:36:07.607Z Has data issue: false hasContentIssue false
  • English
  • Français

Multi-Wavelength Ellipsometry for Effective Characterization of Thin Epitaxial Si1−xGex Layers on Silicon Substrate

Published online by Cambridge University Press:  25 February 2011

Michael Eichler ,
Marita Weidner  and
Thomas Morgenstern
Michael Eichler
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
Marita Weidner
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
Thomas Morgenstern
Affiliation:
Institute of Semiconductor Physics, Walter Korsing Strale 2, O-1200 Frankfurt (Oder), Germany
Get access

Abstract

The range of composition (x) is one of the parameters we often have to measure if Si1-xGex layers are generated by chemical vapour deposition (CVD). It is important in this case, in which way the optical properties of Si1-xGex layers depend on the range of composition. We are interested in using multi-wavelength ellipsometry as a technique for rapid, nondestructive characterization of these samples, without large preparations, especially for series of measurements (2D profiles or wafer-lots). The number of unknown parameters and the multiple solutions are reduced by using several wavelengths during the measurement. The calculation is prepared by the help of parameter-correlation based on results of spectroscopical ellipsometry. To examine the results, thickness and composition were controlled for selected samples by cross-sectional transmission electron microscopy (XTEM) and X-ray double crystal diffractometry (DCD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Azzam, R. M. A., Bashara, N. M. Ellipsomery and Polarized Light, 3rd ed. (North-Holland Physics Publishing, Amsterdam, 1986), p. 539.Google ScholarPubMed
2. PLASMOS GmbH, Ellipsometrical Software for Wavelength Correlated Iteration Procedure, Munich (1992)Google Scholar
3. Lukes, F., Schmidt, W., Humlicek, J., Kekoua, M. K., Khoutschvili, E., Phys. Stat. Sol. 53, 321–325 (1979).Google Scholar
4. Humlicek, J., Garriga, M., Alonso, M. I., Cardona, M., J. Appl. Phys., 65, 2827–2832 (1993).CrossRefGoogle Scholar
5. Racanelli, M., Drowley, C. I., Theodore, N. D., Gregory, R. B., Tompkins, H. G., Appl. Phys. Lett. 60, 2225–2227 (1992).Google Scholar
6. Kroesen, G. M. W., Oehrlein, G. S., Fresart, E. de, Scilla, G. J., Appl.Phys.Lett. 60, 1351–1353 (1992).CrossRefGoogle Scholar
7. Kamins, T. I., Electronics Letters, 27, 451 (1991).Google Scholar
8. Marquardt, D. W.: J. Soc. Ind. Appl. Math., 11, 431 (1963).Google Scholar