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Multiscale Modeling of Stress-Mediated Diffusion in Silicon - Volume Tensors

Published online by Cambridge University Press:  21 March 2011

W. Windl ,
M. S. Daw ,
N. N. Carlson  and
M. Laudon
W. Windl
Affiliation:
Digital DNA Laboratories, Motorola, Inc., Austin, TX
M. S. Daw
Affiliation:
Dept. of Physics & Astronomy, Clemson University, Clemson, SC
N. N. Carlson
Affiliation:
Computational Materials Group, Motorola, Inc., Los Alamos, NM
M. Laudon
Affiliation:
Axiowave Networks, Inc., Marlborough, MA
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Abstract

In a previous paper, we presented a general theoretical treatment of the effect of stress on defect diffusion in Si (M. S. Daw, W. Windl, N. N. Carlson, M. Laudon, and M. P. Masquelier, to be published in Phys. Rev. B). In this paper, we discuss the calculation of the parameters governing the stress dependence of the diffusivity, which are volume quantities, and present the fully anisotropic volume tensor for vacancy formation in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 677: Symposium AA – Advances in Materials Theory and Modeling–Bridging Over Multiple-Length and Time Scales , 2001 , AA9.4
Copyright
Copyright © Materials Research Society 2001

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References

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