Article contents
A Multi-Plane Model for Defect Nucleation at Cracks
Published online by Cambridge University Press: 21 February 2011
Abstract
A mathematical model (2D) of dislocation generation at cracks on interfaces is presented, which takes into account the role of slip processes on several slip planes in the vicinity of a crack. The work investigates the effects of other incipient dislocations on the nucleation and emission of the primary dislocation that emits first and is responsible for crack-tip blunting on atomic length scales. The modeling makes use of the recently-developed Peierls-Nabarro framework for dislocation nucleation. It is found that there is a moderate increase in the critical load necessary to emit a dislocation, when incipient slip activity is allowed to occur on the prolongation of the crack plane. Furthermore, the slip at the tip, the quantity which characterizes to what extent an incipient dislocation forms before it emits, decreases when the dual slip-plane model is used. Implications for the ductile versus brittle response of Ni are discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994
References
- 1
- Cited by