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Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy

Published online by Cambridge University Press:  03 September 2012

D. E. Aspnes ,
N. Dietz ,
U. Rossow  and
K. J. Bachmann
D. E. Aspnes*
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
N. Dietz
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
U. Rossow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Now at Institute of Physics, Ilmenau, Germany.
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
*
†Corresponding author: [email protected].
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Abstract

Various optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 451
Copyright
Copyright © Materials Research Society 1997

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