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Multilayer Materials for Electrostatic Switches

Published online by Cambridge University Press:  17 March 2011

Mark A Phillips
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Brennan L Peterson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Christine M Esber
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Jesse Hwang
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Bruce M Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
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Abstract

Metal multilayers are a unique way to manufacture reliable conductive members for MEMS devices. These members are particularly suited for electrostatic switches. Unlike elemental Al, which experiences curvature problems during processing, the residual stress in these beams can be controlled and calibrated during stress measurements to have repeatable shapes and stresses upon release. In this study, curvature experiments were performed to determine the optimal deposition parameters (pressure, thickness) to produce metal multilayer beams with zero average stress and zero bending moment, which can be obtained by alternating tensile and compressive layers within. Resistivity measurements were made to determine the effect of interfaces on resistivity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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