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MULTILAYER ANODIZATION PROFILE (MAP) A NOVEL DEPTH PROFILE TECHNIQUE FOR METALLIC–BASED LAYERED STRUCTURES

Published online by Cambridge University Press:  28 February 2011

A.M. KADIN ,
R.W. BURKHARDT  and
J.E. KEEM
A.M. KADIN
Affiliation:
Ovonic Synthetic Materials Co., division of Energy Conversion Devices, Inc., Troy, MI 48084
R.W. BURKHARDT
Affiliation:
Ovonic Synthetic Materials Co., division of Energy Conversion Devices, Inc., Troy, MI 48084
J.E. KEEM
Affiliation:
Ovonic Synthetic Materials Co., division of Energy Conversion Devices, Inc., Troy, MI 48084
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Abstract

A simple and inexpensive technique is described, which makes novel use of electrolytic anodization to obtain an effective depth profile of artificial nultilayered structures based on a number of refractory metals. Successful MAPs (Multilayer Anodization Profiles) have been obtained for multilayer structures of Nb/Si, W/Ti, and a variety of other material pairs, with individual layer spacings ranging from less than 10 Å to greater than 50 Å. The spatial resolution of these MAPs annears to be less than about 10 Å, and may in some cases be comparable to the interface sharpness of the sputtered films. Comparison with conventional techniques such as Auger depth profiling and low–angle x-ray diffraction is discussed. Examples of semiquantitative analysis, using the MAP technique, of changes in interface structure brought about by thermal annealing, are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 473
Copyright
Copyright © Materials Research Society 1986

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