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Mo-W-O thin films for CO sensing

Published online by Cambridge University Press:  17 March 2011

Elisabetta Comini ,
Matteo Ferroni ,
Vincenzo Guidi ,
Giuliano Martinelli ,
Michele Sacerdoti ,
Gianantonio Della Mea ,
Alberto Vomiero ,
Girolamo Di Francia  and
Giorgio Sberveglieri
Elisabetta Comini
Affiliation:
Universitá di Ferrara, Dipartimento di Fisica and INFM, Via Paradiso 12, I-44100 Ferrara, ITALY
Matteo Ferroni
Affiliation:
Universitá di Ferrara, Istituto di Mineralogia, Corso Ercole I d'Este, I-44100 Ferrara, ITALY
Vincenzo Guidi
Affiliation:
Universitá di Ferrara, Dipartimento di Fisica and INFM, Via Paradiso 12, I-44100 Ferrara, ITALY Istituto Nazionale di Fisica Nucleare - Sezione di Ferrara, Via Paradiso 12, I-44100 Ferrara, ITALY
Giuliano Martinelli
Affiliation:
Universitá di Ferrara, Dipartimento di Fisica and INFM, Via Paradiso 12, I-44100 Ferrara, ITALY
Michele Sacerdoti
Affiliation:
Universitá di Ferrara, Istituto di Mineralogia, Corso Ercole I d'Este, I-44100 Ferrara, ITALY
Gianantonio Della Mea
Affiliation:
Laboratori Nazionali Legnaro, INFN, Via Romea 4- 35020, Legnaro (Padova), Italy
Alberto Vomiero
Affiliation:
Laboratori Nazionali Legnaro, INFN, Via Romea 4- 35020, Legnaro (Padova), Italy
Girolamo Di Francia
Affiliation:
ENEA PORTICI, Via Vecchio Macello, Loc. Granatello, 80055, Portici
Giorgio Sberveglieri
Affiliation:
INFM and Department of Chemistry and Physics for Engineering and Materials, Brescia University, via Valotti 9, 25133 Brescia, Italy
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Abstract

The Mo-W-O thin films were deposited by RF reactive sputtering from composite target of W and Mo (20:80 weight ratio). Structural characterisation was carried out by X-ray diffraction spectroscopy and the composition of the film was obtained by Rutherford backscattering analysis. The layers were investigated by volt-amperometric technique for electrical and gas-sensing properties. The films were capable of sensing CO. No effect of poisoning of the surface was recorded and recovery of the resistance was complete. A concentration of CO as low as 15 ppm produced a relative variation in the conductance of 390% with response and recovery times of about 2 minutes at a working temperature of 200°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.40.1
Copyright
Copyright © Materials Research Society 2001

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