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Movpe Strip-Like Self-Organization of InAs Grown on InP Vicinal Surfaces

Published online by Cambridge University Press:  10 February 2011

Laurent Auvray ,
Véronique Soulière ,
Hervé Dumont ,
Jacques Dazord ,
Yves Monteil  and
Jean Bouix
Laurent Auvray
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Véronique Soulière
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Hervé Dumont
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Jacques Dazord
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Yves Monteil
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Jean Bouix
Affiliation:
LMI UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
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Abstract

We have investigated the influence of MOVPE growth parameters on the surface morphology of InAs nanostructures grown on 0.2° misoriented (001)InP substrates. Thin layers of nominal thickness of about 3 and 6 ML were deposited at 500°C with V/Ill flux ratios ranging from 50 to 240. The samples were cool down from 500 to 350°C during 6 minutes under either arsine or phophine atmosphere. The influence of this step has been found to greatly determine the surface morphology of the nanostructures observed by atomic force microscopy. Dots self-aligned along the steps and forming a non continuous strip, regularly spaced every 3-4 terraces have been obtained. The morphology of the strips can be varied with the growth conditions (V/III flux ratio). In this work, we will propose a mechanism for the formation of the strips observed during the cooling under phosphine atmosphere taking into account an As » P exchange.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 59
Copyright
Copyright © Materials Research Society 2000

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References

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