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MOVPE Growth of GaAs on Si Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

S. Miyagaki ,
S. Ohkubo ,
K. Takai ,
N. Takagi ,
M. Kimura ,
Y. Kikuchi ,
T. Eshita  and
K. Takasaki
S. Miyagaki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Ohkubo
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Takai
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
N. Takagi
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
M. Kimura
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Y. Kikuchi
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Eshita
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Takasaki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

We developed GaAs heteroepitaxy on a Si substrate by metalorganio vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). When we preheated Si at 1000ºC in the atmosphere including TBAs, a carbide layer was formed on the Si surface. This led to polycrystalline GaAs growth. By carrying out high-temperature preheating in an H2 -only atmosphere and supplying TBAs after the preheating, we have successfully grown single-crystal GaAs with a mirror surface in a process completely free of AsH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 209
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Stringfellow, G. B., J. Electron. Mater. 17, 327 (1988).Google Scholar
2. Vook, D. W., Reynolds, S., and Gibbons, J. F., Appl. Phys. Lett. 50, 1386 (1987).Google Scholar
3. Fujita, S., Uemoto, Y., Araki, S., Imaizumi, M., Takeda, Y., and Sasaki, A., Jpn. J. Appl. Phys. 27, 1151 (1988).Google Scholar
4. Lum, R. M., Klingert, J. K., 3W. Kisker, W., Abys, S. M., and Stevie, F. A., J. Cryst. Growth 93, 120 (1988).Google Scholar
5. Haacke, G., Watkins, S. P., and Burkhard, H., J. Cryst. Growth 107, 342 (1991).Google Scholar
6. Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Cryst. Growth 68, 21 (1984).Google Scholar