Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T17:45:30.048Z Has data issue: false hasContentIssue false
  • English
  • Français

MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor

Published online by Cambridge University Press:  22 February 2011

O. Briot ,
M. Di Blasio ,
T. Cloitre ,
N. Briot ,
P. Bigenwald ,
B. Gil ,
M. Averous ,
R. L. Aulombard ,
L. M. Smith  and
S. A. Rushworth
...Show all authors
O. Briot
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
M. Di Blasio
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
T. Cloitre
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
N. Briot
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
P. Bigenwald
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
B. Gil
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
M. Averous
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
R. L. Aulombard
Affiliation:
Groupe d'Etudes des Semiconducteurs, Univ. Montpellier II, CC 074, Pl. E. Bataillon 34095 Montpellier Cedex 5, France
L. M. Smith
Affiliation:
EPICHEM Ltd., Power road, Bromborough, Wirral, Merseyside, L62 3QF, United Kingdom
S. A. Rushworth
Affiliation:
EPICHEM Ltd., Power road, Bromborough, Wirral, Merseyside, L62 3QF, United Kingdom
A.C. Jones
Affiliation:
EPICHEM Ltd., Power road, Bromborough, Wirral, Merseyside, L62 3QF, United Kingdom
Get access

Abstract

A novel zinc precursor adduct tetramethylmethylene diamine: dimethylzinc (TMMD:DMZn) has been used to grow ZnSe-ZnS strained layer superlattices by low pressure MOVPE at 300'C. The use of this new precursor leads to improved material purity and lower homogeneous gas phase premature reaction than in the case of dimethylzinc. Optical characterization has been made between liquid helium and room temperature. The 2K photoluminescence lines range between 2.85 eV and 3.15 eV. The 2K photoluminescence is characterized by a linewidth at half maximum ranging from 13-45 meV. Additional reflectivity and photoreflectance experiments have been carried out to measure light-hole excitons. A variational calculation of the Rydberg energies has been performed using a sophisticated trial function. The experimental data is in agreement with the theoretical value when a small conduction band offset is used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 515
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Haase, M. A., Qiu, J., Depuydt, J. M. and Cheng, H., Appl. Phys. Lett. 59, 1272 (1991)Google Scholar
[2] Jeon, H., Ding, J., Patterson, W., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. and Gunshor, R. L., Appl. Phys. Lett. 59, 27 (1991) 3619 Google Scholar
[3] Molva, E., Accomo, R. Labrunie, G., Cibert, J., Bodin, C., Dang, Le Si and Feuillet, G., Appl. Phys. Lett. 62, 8 (1993) 796 Google Scholar
[4] Shen, A., Cui, J., Chen, Y. and Wang, H., J. Cryst. Growth 111 (1991) 807 Google Scholar
[5] Guha, S., DePuydt, J.M., Haase, M. A., Qiu, J. and Cheng, H., Appl. Phys. Lett. 63 (1993) 3107 Google Scholar
[6] Tamargo, M. C., Miguel, J. L. de, Hwang, D. M. and Farrel, H. H., J. Vac. Sci. Technol. B6 (1988) 784 Google Scholar
[7] Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M. and Gunshor, R. L., Appl. Phys. Lett. 57 (1990) 449 Google Scholar
[8] Wright, A. C., Williams, J. O., J. Cryst. Growth 114 (1991) 99 Google Scholar
[9] Fujita, S., Matsuda, Y. and Sasaki, A., Appl. Phys. Lett. 47, 9 (1985) 955 Google Scholar
[10] Hayashi, Sg., Sakamoto, T., Fujita, S. and Fujita, Sg., Appl. Surf. Science 41 (1989) 534 Google Scholar
[11] Soga, T., Hattori, S., Sasaki, S. and Umeno, M., Electron. Letters 20 (1984) 916 Google Scholar
[12] Gourley, P. L., Drummond, T. J. and Doyle, B. L., Appl. Phys. Lett. 49 (1986) 1101 Google Scholar
[13] Jones, A. C., Semicond. Sci. Technol. 6 (1991) A36 Google Scholar
[14] Wright, P. J., Parbrook, P. J., Cockayne, B., Jones, A. C., Orrel, E. D., O'Donnell, K. P. and Henderson, B., J. Cryst. Growth 94 (1989) 441 Google Scholar
[15] Jones, A. C., Rushworth, S. A., O'Brien, P., Walsh, J. R. and Meaton, C., J. Cryst. Growth 130 (1993) 295 Google Scholar
[16] O'Brien, P., Walsh, J. R., Jones, A. C., Rushworth, S. A. and Meaton, C., J. Mater. Chem. 3 (1993) 739 Google Scholar
[17] Yamada, Y. and Taguchi, T., J. Cryst. Growth 101 (1990) 661 Google Scholar
[18] Yao, T., Fujimoto, M., Chang, S. K. and Tamino, H., J. Cryst. Growth 111 (1991) 823 Google Scholar
[19] Yang, F., Parbrook, P. J., Henderson, B. and O'Donnell, K. P., Appl. Phys. Lett. 59, 17 (1991) 2142 Google Scholar