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Mott Transition Field Effect Transistor: Experimental Results
Published online by Cambridge University Press: 10 February 2011
Abstract
In this paper we describe the fabrication of oxide based devices similar in architecture to a conventional FET with source, drain, and gate electrodes and a channel. This distinctive characteristic of our device is the use of a channel material capable of undergoing a field-induced Mott insulator-metal transition at room temperature. Lithographic techniques developed for oxide materials have been combined with pulsed laser deposition of perovskite materials onto single-crystal strontium titanate (STO) substrates to fabricate these devices. Materials chosen for the Mott transition channel include La2CuO4 (LCO) and YBCO, p-type; and Nd2CuO4, n-type.
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- Copyright © Materials Research Society 1999
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