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Morphology of Ti37Al63 Thin-FilmsDeposited by Magnetron Sputtering

Published online by Cambridge University Press:  17 March 2011

N. David Theodore ,
Hyunchul C. Kim ,
Kaustubh S. Gadre ,
James W. Mayer  and
Terry L. Alford
N. David Theodore
Affiliation:
DigitalDNA™ Labs., Motorola Inc., 2100 E. Elliot Rd., MD-EL622, Tempe, AZ 85284, U.S.A
Hyunchul C. Kim
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Kaustubh S. Gadre
Affiliation:
Intel Corp., RA3-402, 2501 NW 229th St., Hillsboro, OR 97124, U.S.A
James W. Mayer
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Terry L. Alford
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
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Abstract

TiAl based thin-films possess high oxidation-resistance and high meltingpoints, making them possible candidates for application in electronics. Thebehavior of the films upon exposure to various temperatures is of interestfor such application. In the present study, Ti37Al63thin films were deposited onto SiO2 substrates using RF magnetronsputtering from a compound target. Anneals were performed in vacuum attemperatures ranging from 400 °C to 700 °C. The phases and microstructuralbehavior of the films were evaluated as a function of annealing.Microstructural behavior was correlated with resistivity changes in thefilms. The behavior of Ti-Al films as potential under-layers for silvermetallization was also evaluated. The Ti-Al was observed to enhance thethermal stability of pure Al thin-films. The results are relevant forpotential application of the films to electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.25
Copyright
Copyright © Materials Research Society 2004

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