Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:36:57.683Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology of Ag Islands Grown on GaAs (110) at Low Coverage: Monte Carlo Simulations

Published online by Cambridge University Press:  21 February 2011

A. Challa ,
J. Drucker  and
T.S. Cale
A. Challa
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, [email protected]
J. Drucker
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX 79968-0515, [email protected]
T.S. Cale
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206, [email protected]
Get access

Abstract

The growth morphology of Ag on GaAs (110) surfaces, at low coverages, is investigated with Monte Carlo simulations using a solid-on-solid model. Experimentally Ag deposited at room temperature forms 3D isotropic islands and forms needle-like islands elongated along the <110> direction when deposited at 250°C. Preliminary simulation results using 2D island growth model indicated that the elongation of islands at 250°C deposition is due to anisotropic surface diffusion and nearest-neighbor interactions along the <100> and <110> directions. The island morphologies obtained using a 3D island growth model are in good agreement with experimentally observed morphologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 103
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cao, R., Miyano, K., Lindau, I. and Spicer, W. E., J. Vac. Sci. Technol. A 7, 1975 (1989).Google Scholar
2 Jacobsen, J., Jacobsen, K.W., Stoltze, P. and Nørskov, J.K., Phys. Rev. Lett. 74, 2,295 (1995).Google Scholar
3 Orme, C., Johnson, M.D., Leung, K.-T., Orr, B.G., Smilauer, P. and Vvedensky, D., J. Cryst. Growth, 150, 128 (1995).Google Scholar
4 Meyer, J.A., Vrijmoeth, J., van der Vegt, H.A., Vlieg, E. and Behm, R.J., Phys. Rev. B 51, 14,790 (1995).Google Scholar
5 Drucker, J. and Krishnamurthy, M., in Evolution of Thin Film and Surface Structure and Morphology, edited by Demczyk, B.G., Garfunkel, E., Clemens, B.M., Williams, E.D. and Cuomo, J.J. (Mater. Res. Soc. Proc. 355, Boston, MA (1994), p. 95–99.Google Scholar
6 Krishnamurthy, M. and Drucker, J. in Evolution of Thin Film and Surface Structure and Morphology, edited by Demczyk, B.G., Garfunkel, E., Clemens, B.M., Williams, E.D. and Cuomo, J.J. (Mater. Res. Soc. Proc. 355, Boston, MA (1994), p. 59–64.Google Scholar
7 Trafas, B. M., Yang, Y. N., Siefert, R. L. and Weaver, J. H., Phys. Rev. B 43, 14107(1991).Google Scholar
8 Challa, A., Cale, T.S. and Drucker, J. in Evolution of Thin Film and Surface Structure and Morphology, edited by Demczyk, B.G., Garfunkel, E., Clemens, B.M., Williams, E.D. and Cuomo, J.J. (Mater. Res. Soc. Proc. 355, Boston, MA (1994), p. 100–106 Google Scholar
9 Bales, G.S. and Chrzan, D.C., Phys. Rev. B 50, 6057(1994).Google Scholar