Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:00:50.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology and Deposition Conditions of CVD Au Films

Published online by Cambridge University Press:  25 February 2011

Karen Holloway ,
Steven P. Zuhoski ,
Scott Reynolds  and
Christine Matuszewski
Karen Holloway
Affiliation:
IBM, TJ. Watson Research Center, Yorktown Heights, NY 10598
Steven P. Zuhoski
Affiliation:
IBM, General Technology Division, Hopewell Junction, NY 12533
Scott Reynolds
Affiliation:
IBM, TJ. Watson Research Center, Yorktown Heights, NY 10598
Christine Matuszewski
Affiliation:
IBM, TJ. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

The chemical vapor deposition of Au films by thermal decomposition from an organometallic precursor [dimethyl 1,1,1,5,5,5-hexaflouro-2,3-pentanedionato Au (III)] has been investigated for application as a interconnection metallization. The morphology and feature fill properties of deposits obtained using H2 and N2 carrier gases and varying pressure and temperature conditions were observed by cross-section scanning and transmission electron microscopy (SEM and TEM). Line patterns etched in SiO2 with aspect ratios up to 1.5 filled with few or no voids at a growth temperature of 250°C. For films deposited in H2 the Au grain size is large (on the order of the feature size). In unetched areas, however, large (600 nm) triangular-shaped structures protrude from the deposit. TEM observation shows that these structures are single-crystal Au dendrites which contain a central twinned region. Au films grown at 275°C had poor hole fills with large, irregular voids. These films exhibited large protrusions which occluded the lines and halted growth in these areas. The deposit morphology suggests a low reaction probability except at preferred crystal sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 409
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Larson, C.E., Baum, T.H., and Jackson, R.L., J. Electrochem. Soc. 134, 266 (1987).Google Scholar
2. Baum, T.H. and Jones, C.R., Appl. Phys. Lett. 47, 538(1985).Google Scholar
3. Baum, T.H. and Jones, C.R., J. Vac. Sci. Technol. B 4, 1187 (1986).Google Scholar
4. Baum, T.H., J. Electrochem. Soc. 134, 2616 (1987).Google Scholar
5. Kodas, T.T., Baum, T.H., and Comita, P.B., J. Cryst. Growth 87, 378 (1988).Google Scholar
6. Shedd, G.M., Lezec, H., Dubner, A.D., and Melngailis, J., Appl. Phys. Lett. 49, 1584 (1986).Google Scholar
7. Dubner, A.D. and Wagner, A., J. Appl. Phys. 65, 3636 (1989).Google Scholar
8. Dubner, A.D. and Wagner, A., J. Appl. Phys. 66, 870 (1989).Google Scholar
9. Structure of Metals, Barrett, C. and Massalski, T.B., International Series on Material Science and Technology, Volume 35, Pergamon Press (1980).Google Scholar
10. Bassett, G.A., Menter, J.W., and Pashley, D.W., in Structure and Properties of Thin Films, Neugebauer, C.A., Newkirk, J.B., and Vermilyea, D.A., eds., John Wiley and Sons, Inc. (1959), p.1.Google Scholar
11. Mullins, W.W. and Sekerka, R.F., J. Appl. Phys. 34, 323 (1963); J. Appl. Phys. 35, 444 (1964).Google Scholar
12. Sherman, A., in Chemical Vapor Deposition for Microelectronics, Noyles Publications, Park Ridge, NJ (1987) p. 14.Google Scholar
13. Sears, G.W., Acta Met. 3, 367 (1955).Google Scholar
14. Sinclair, R., Carim, A.H., Morgiel, J., and Bravman, J.C., Mat. Res. Soc. Proc. 106, 27 (1988).Google Scholar
15. Spinella, C., Lombardo, S., and Campisano, S.U., Appl. Phys. Lett. 57, 554 (1990).Google Scholar