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Morphologies of Self-Assembled Quantum Dots: A Variational Approach

Published online by Cambridge University Press:  21 March 2011

R. Arief Budiman  and
Harry E. Ruda
R. Arief Budiman
Affiliation:
University of Toronto, Toronto, Ontario M5S 3E3, Canada
Harry E. Ruda
Affiliation:
University of Toronto, Toronto, Ontario M5S 3E3, Canada
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Abstract

We construct a 3D model for coherent island formation by (i) using a novel 3D strain tensor to account for bulk strains and (ii) representing adatom diffusion as an external field that perturbs an otherwise flat strained layer. Equilibrium shapes of coherent islands and wetting layer thickness are obtained. Coherently compressed layers are typically unstable, but become stable in tension. Comparisons with Si1-xGex/Si(001) and Si0.5Ge0.5/Si1-xGex(001) layers are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 707: Symposium AA – Self-Assemble Processes in Materials , 2001 , N5.10.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

[1] Ross, F. M., IBM J. Res. Develop. 44, 489 (2000).Google Scholar
[2] Williams, A. A., Thornton, J. M. C., Macdonald, J. E., Silfhout, R. G. van, Veen, J. F. van der, Finney, M. S., Johnson, A. D. and Norris, C., Phys. Rev. B 43, 5001 (1991).Google Scholar
[3] Xie, Y. H., Gilmer, G. H., Roland, C., Silverman, P. J., Buratto, S. K., Cheng, J. Y., Fitzgerald, E. A., Kortan, A. R., Schuppler, S., Marcus, M. A. and Citrin, P. H., Phys. Rev. Lett. 73, 3006 (1994).Google Scholar
[4] Guyer, J. E., Barnett, S. A. and Voorhees, P. W., J. Cryst. Growth 217, 1 (2000).Google Scholar
[5] Kegel, I., Metzger, T. H., Lorke, A., Peisl, J., Stangl, J., Bauer, G., Garcia, J. M. and Petroff, P. M., Phys. Rev. Lett. 85, 1694 (2000).Google Scholar
[6] Budiman, R. A. and Ruda, H. E., J. Appl. Phys. 88, 4586 (2000).Google Scholar
[7] Freund, L. B. and Nix, W. D., Appl. Phys. Lett. 69, 173 (1996).Google Scholar
[8] Tsao, J. Y., Materials Fundamentals of Molecular Beam Epitaxy (Academic Press, Boston, 1993), Ch. 6.Google Scholar
[9] Smith, D. L., Thin-Film Deposition: Principles and Practice (McGraw-Hill, New York, 1995), Ch. 1.Google Scholar
[10] Perović, D. D., Bahierathan, B., Lafontaine, H., Houghton, D. C. and McComb, D. W., Physica A 239, 11 (1997).Google Scholar
[11] Tromp, R. M., Ross, F. M. and Reuter, M. C., Phys. Rev. Lett. 84, 4641 (2000).Google Scholar
[12] Osten, H. J., Zeindl, H. P. and Bugiel, E., J. Cryst. Growth 143, 195 (1994).Google Scholar
[13] Milman, V., Jesson, D. E., Pennycook, S. J., Payne, M. C., Lee, M. H. and Stich, I., Phys. Rev. B 50, 2663 (1994).Google Scholar