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Morphological Transformations in the Crystallization of Tese-Halide Thin Films

Published online by Cambridge University Press:  21 February 2011

A. Blatter ,
C. Ortiz  and
J. L. Adam
A. Blatter
Affiliation:
Perm. address: Institute of Applied Physics, Sidlerstr. 5, CH-3012 Berne, Switzerland
C. Ortiz
Affiliation:
IBM Almaden Research Center, 650 Harry Rd., San Jose, CA 95120
J. L. Adam
Affiliation:
Lab. Verres et Ceramiques, Universite de Rennes, Campus Beaulieu, 35042 Rennes, France
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Abstract

Amorphous Te3Se4 X (X = Br,I) thin films were prepared by RF sputter deposition where the halide is used to stabilize the amorphous structure. Crystallization in the films was induced by heating with pulsed laser irradiation, with an electron beam, and in a furnace. Crystallization was achieved when the halide was depleted which became more difficult the higher its mass and concentration. As a consequence, crystallization was highly anisotropic and confined to a thin surface layer with a lateral size to thickness ratio of up to 104. We observed various stages of the process. At low temperature, a spherulitic-type growth produced a low-dimensional branching morphology by non diffusive processes such as rotation. Increasing temperature favored the formation of higher dimensions with patterns typical for aggregation processes. At the highest temperatures material flow enabled the formation of three-dimensional structures. In case of the films with Iodine, facetted single crystals grew out of the surface to sizes many times larger than the original film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 111
Copyright
Copyright © Materials Research Society 1993

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References

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