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Monte-Carlo Simulation of Energy Relaxation of Interacting Carriers in a-Si:H Under Arbitrary Electric Fields

Published online by Cambridge University Press:  01 January 1993

B. Cleve ,
R. Hess ,
S.D. Baranovskii  and
P. Thomas
B. Cleve
Affiliation:
Fachbereich Physik und Wiss. Zentrum für Materialwissenschaften, Renthof 5, W-3550 Marburg, FRG.
R. Hess
Affiliation:
Fachbereich Physik und Wiss. Zentrum für Materialwissenschaften, Renthof 5, W-3550 Marburg, FRG.
S.D. Baranovskii
Affiliation:
Fachbereich Physik und Wiss. Zentrum für Materialwissenschaften, Renthof 5, W-3550 Marburg, FRG.
P. Thomas
Affiliation:
Fachbereich Physik und Wiss. Zentrum für Materialwissenschaften, Renthof 5, W-3550 Marburg, FRG.
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Abstract

A new Monte-Carlo simulation algorithm has been applied to verify the concept of the effective temperature recently suggested as a description of energy relaxation of carriers in band tails of amorphous semiconductors under the presence of an applied electric field. The algorithm allows the simulation with arbitrary applied field and finite temperature. The results of the simulation agree favourably with the theoretical prediction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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References

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