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Monte Carlo Simulation of the Growth of ZnSe by MBE

Published online by Cambridge University Press:  26 February 2011

R. Venkatasubramanian
Affiliation:
Purdue University, West Lafayette, Indiana-47907
N. Otsuka
Affiliation:
Purdue University, West Lafayette, Indiana-47907
S. Datta
Affiliation:
Purdue University, West Lafayette, Indiana-47907
L. A. Kolodziejski
Affiliation:
Purdue University, West Lafayette, Indiana-47907
R. L. Gunshor
Affiliation:
Purdue University, West Lafayette, Indiana-47907
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Abstract

A Monte Carlo study of the growth of ZnSe by Molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions on the structural quality of the epilayers. Two different models for the incorporation of Se molecules, one with a highly reactive physisorbed state and the other with a relatively nonreactive physisorbed state are employed for simulations. It is shown that the structural quality of the epilayers is very sensitive to the flux ratio if the physisorbed state is relatively nonreactive. It is also shown that if the physisorbed state is highly reactive, good quality epilayers are obtained over a wide range of flux ratio.

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Articles
Copyright
Copyright © Materials Research Society 1987

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References

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