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Monte Carlo simulation of Boron diffusion during low energy implantation and high temperature annealing

Published online by Cambridge University Press:  15 February 2011

M.-J. Caturla ,
T. Diaz de la Rubia ,
J. Zhu  and
M. Johnson
M.-J. Caturla
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA-94550
T. Diaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA-94550
J. Zhu
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA-94550
M. Johnson
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA-94550
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Abstract

We use a kinetic Monte Carlo model to simulate the implantation of low energy Boron in Silicon, from 0.5 to 1 keV, at high doses, 1015 ions/cm2. The damage produced by each ion is calculated using UT-Marlowe, based on a binary collision approximation. During implantation at room temperature,, silicon self-interstitials, vacancies and boron interstitials are allowed to migrate and interact. The diffusion kinetics of these defects and dopants has been obtained by ab initio calculations as well as Stillinger Weber molecular dynamics. Clustering of both self-interstitials, vacancies and boron atoms is included. We also model the diffusion of the implanted dopants after a high temperature annealing in order to understand the transient enhanced diffusion (TED) phenomenon. We observe two different stages of TED During the first stage vacancies are present in the lattice together with interstitials and the diffusion enhancement is small. The second stage starts after all the vacancies disappear and gives rise to most of the final TED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 335
Copyright
Copyright © Materials Research Society 1997

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