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Monte Carlo and Molecular Dynamics Simulations of Liquid Semiconductor Surfaces

Published online by Cambridge University Press:  10 February 2011

Zhiqiang Wang
Affiliation:
Lucent Technologies, Murray Hill, NJ 07974, email [email protected]
Wenbin Yu
Affiliation:
Alaris Medical Systems, San Diego, CA 92121
David Stroud
Affiliation:
Department of Physics, Ohio State University, Columbus, OH 43210
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Abstract

We have numerically studied the surface tension and surface profiles of several liquid semiconductors, including Si, Ge, GaAs, CdTe, and their alloys, as a function of temperature and concentration. Two kinds of simulations have been carried out: direct free-energy calculations using Monte Carlo methods, and force summations using molecular dynamics. We use empirical two- and three-body interatomic interactions based on the form originally proposed by Stillinger and Weber for Si, in conjunction with simulation cell sizes ranging from 216 to as large as 8000 atoms and several novel numerical techniques including a direct calculation of the surface entropy. In the case of alloys, we find a striking segregation of the low-surface-tension component to the surface even when the alloy components are miscible at all concentrations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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