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Monolithic Integration of Si and GaAs Devices

Published online by Cambridge University Press:  25 February 2011

H. K. Choi ,
G. W. Turner ,
B-Y. Tsaur  and
T. H. Windhorn
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
T. H. Windhorn
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
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Abstract

Integration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 165
Copyright
Copyright © Materials Research Society 1986

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References

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