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Monocrystam Disiocationless Si:Ge, Grown from the Helt Wits Gd Impurity

Published online by Cambridge University Press:  25 February 2011

Borschensky V.V. ,
Brinkevich D.I. ,
Petrov V.V.  and
Prosolovch V.S.
Borschensky V.V.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Brinkevich D.I.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Petrov V.V.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
Prosolovch V.S.
Affiliation:
Byelorussian State University, Department of Physic, Scorina Avenue, 4, 220080 Minsk, Republic Belarus
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Abstract

The properties of Si grown from the melt having impurities of germanium and gadolinium have been studied by IR-absorption and Hall effect methods.It was stated that Ge and Gd are effective getters for technological impurities of oxygen and carbon in silicon melt. It has been shown that the combined doping by rare earth and isovalent impurities allows to increase the thermostability of dislocationless monocrystals of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 403
Copyright
Copyright © Materials Research Society 1993

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References

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