Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:51:06.991Z Has data issue: false hasContentIssue false
  • English
  • Français

Monitoring SIMOX Layer Properties and Implantation Temperature by Optical Measurements

Published online by Cambridge University Press:  28 February 2011

Guenther Harbeke ,
E.F. Steigmeier ,
Peter L.F. Hemment ,
Karen J. Reeson  and
Lubek Jastrzebski
Guenther Harbeke
Affiliation:
SIN c/o Laboratories RCA Ltd., Badenerstrasse 569, CH-8048 Zürich, Switzerland
E.F. Steigmeier
Affiliation:
SIN c/o Laboratories RCA Ltd., Badenerstrasse 569, CH-8048 Zürich, Switzerland
Peter L.F. Hemment
Affiliation:
Dept. of Electrical Engineering, University of Surrey, Guildford, UK
Karen J. Reeson
Affiliation:
Dept. of Electrical Engineering, University of Surrey, Guildford, UK
Lubek Jastrzebski
Affiliation:
SRI, David Sarnoff Research Center, CN 5300, Princeton, NJ 08543–5300, USA
Get access

Abstract

Infrared absorption and Raman scattering measurements of SIMOX structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 133
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 David, J.R., Taylor, M.R., Spiller, G.D.T., Skevington, P.J. and Hemment, P.L.F., Appl. Phys. Lett. 48, 1279 (1986)Google Scholar
2 Kim, M.J., Brown, D.M., and Garfinkel, M., J. Appl. Phys. 54, 1991 (1983)Google Scholar
3 Das, K., Butcher, J.B. and Anand, K.V., J. Electronic Mats. 13, 635 (1984)Google Scholar
4 Galeener, F.L., Phys. Rev. B 19, 4292 (1979).Google Scholar
5 Lukovski, G., Manitini, M.J., Srivstava, J.K. and Irene, E.A., J. Vac. Sci. Technol. B 4, 530 (1987).Google Scholar
6 Irene, A.E., Tierney, E., and Angilello, J., J. Electrochem. Soc. 129, 2594 (1982)Google Scholar
7 See e.g. E.F. Steigmeier, R. LOudon, G. Harbeke, H. Auderset and G. Scheiber, Solid State Comm. 17, 1447 (1975)Google Scholar
8 Steigmeier, E.F., (private communication).Google Scholar