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Monitoring Of Direct Reactions During Etching Of Silicon

Published online by Cambridge University Press:  15 February 2011

K. P. Giapis  and
T. K. Minton
K. P. Giapis
Affiliation:
Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena CA 91125, [email protected]
T. K. Minton
Affiliation:
Division of Chemistry and Biochemistry, Montana State University, Bozeman, MO 59717
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Abstract

We present evidence of a direct reaction occurring when a hyperthermal fluorine atom beam (4.8 eV) impinges on a fluorinated silicon surface under steady-state etching conditions. When monitoring in-situ and in real time reactive scattering products by means of a quadrupole mass spectrometer, SiF3+ and SiF2+ are detected with bimodal time of flight distributions. The slow component can be described by a Maxwell-Boltzmann distribution at the surface temperature. However, the fast component is leaving the surface with velocities substantially higher than thermal and with a flux which does not obey the cosine law. Its translational energy increases with the angle of incidence of the hyperthermal fluorine beam. Etching in the direct reaction mode should result in highly anisotropic profiles by overcoming product desorption limitations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 33
Copyright
Copyright © Materials Research Society 1996

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References

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