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Molecular Dynamics Simulations of Nucleation and Crystallization Processes During Excimer-Laser Annealing of Amorphous Silicon on Glass

Published online by Cambridge University Press:  15 February 2011

T. Motooka ,
S. Munetoh ,
Lee Byoung Min  and
K. Nisihira
T. Motooka
Affiliation:
Kyushu University, Dept of Materials Science and Engineering, Fukuoka, JAPAN.
S. Munetoh
Affiliation:
Kyushu University, Dept of Materials Science and Engineering, Fukuoka, JAPAN.
Lee Byoung Min
Affiliation:
Kyushu University, Dept of Materials Science and Engineering, Fukuoka, JAPAN.
K. Nisihira
Affiliation:
Kyushu University, Dept of Materials Science and Engineering, Fukuoka, JAPAN.
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Abstract

We have investigated atomistic processes of nucleation and crystallization in excimer-laser annealed thin Si films on glass based on molecular-dynamics (MD) simulations using the Tersoff potential. MD cells composed of up to approximately 50000 Si atoms were heated to produce melted Si, and then melted Si was quenched under various supercooled conditions with or without a temperature gradient and the corresponding nucleation processes were visualized. Lateral growth of thin Si crystalline films was also simulated by embedding a crystalline nano-particle with various crystal surfaces in melted Si. It has been found that the crystal surfaces become predominantly {111} during the lateral growth processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y2.3
Copyright
Copyright © Materials Research Society 2003

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References

references

1. Tersoff, J., Phys. Rev. B38, 9902 (1988).Google Scholar
2. Cook, S. J. and Clancy, P., Phys. Rev. B47, 7686 (1993).Google Scholar
3. Motooka, T., Nisihira, K., Munetoh, S., Moriguchi, K., and Shintani, A., Phys. Rev. B61, 8537 (2000).Google Scholar
4. Nishihira, K. and Motooka, T., Phys. Rev. B 66, 233310 (2002).Google Scholar
5. Motooka, Teruaki, Nishihira, Ken, Oshima, Ryuichiro, Nishizawa, Hirosato, and Hori, Fuminobu, Phys. Rev. B 65, 081304 (2002)Google Scholar
6. Motooka, T., Harada, S., and Ishimaru, M., Phys. Rev. Lett. 78, 2980 (1997).Google Scholar