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Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.

Published online by Cambridge University Press:  25 February 2011

A. M. Mazzone
A. M. Mazzone*
Affiliation:
CNR – Istituto LAMEL, Via de'Castagnoli 1 – I 40126 Bologna.
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Abstract

Displacement cascades formed in a silicon crystal by As+ and Si+ ions with energy in the range 50–500 eV are constructed with a molecular dynamics and a Monte Carlo simulation method. Conspicuous spike effects are observed with the molecular dynamics simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 157
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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