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Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

Published online by Cambridge University Press:  25 February 2011

J. A. Dura ,
J. T. Zborowski  and
T. D. Golding
J. A. Dura
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
J. T. Zborowski
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
T. D. Golding
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
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Abstract

We have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 35
Copyright
Copyright © Materials Research Society 1992

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References

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