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Molecular Beam Epitaxy of Superconducting Bismuthates on Various Substrates

Published online by Cambridge University Press:  25 February 2011

E. S. Hellman ,
E. H. Hartford ,
C. D. Brandle ,
G. W. Berkstresser ,
H. P. Jenssen ,
A. Cassanho  and
D. Gabbe
E. S. Hellman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
E. H. Hartford
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. D. Brandle
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
G. W. Berkstresser
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
H. P. Jenssen
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
A. Cassanho
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
D. Gabbe
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We report epitaxial growth of the simple cubic perovskites Ba1-xKxBiO3 and Ba1-xRbxBiO3 on Ba3LaNb3O12, LiBaF3, BaF2, and Al2O3. Films with excellent crystallinity are obtained on the perovskite substrates, LiBaF3, and Ba3LaNb3O12. (1 1 1) or (1 1 0) films can be obtained on {1 1 1} BaF2, depending on the nucleation temperature. Non-epitaxial superconducting films have been grown on Si and on GaAs. At the low growth temperatures used (200–450°C), reactions with the substrates do not pose problems. The choice of substrate not only determines the microstructure of the film, but also plays a role in allowing the film to change its oxygen stoichiometry. Stoichiometry shifting is a pervasive necessity for the synthesis of high Tc thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 53
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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