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Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds

Published online by Cambridge University Press:  28 February 2011

D.G. Schlomtt
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305 Varian Research Center, Palo Alto, CA 94303
J.N. Eckstein
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
I. Bozo Vic
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
A.F. Marshall
Affiliation:
Center for Materials Research, Stanford University, Stanford, CA 94305
J.T. Sizemore
Affiliation:
Varian Research Center, Palo Alto, CA 94303
Z.J. Chent
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
K.E. Von Dessonneck
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
J.S. Harris Jr.
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
J.C. Bravmant
Affiliation:
Varian Research Center, Palo Alto, CA 94303
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Abstract

The in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can‐1CunOx phases, including 2201, 2212,2223,2245, and layered mixtures of these phases. Using these techniques a superconducting film with TC onset near 100 K and Tc (ρ=0) of 81 K was achieved under entirely MBE conditions (Pchamber≤xl0‐4 Torr during growth and cooling). The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE growth to selectively grow Bi2Sr2Can‐1CunOx phases.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1 Schlom, D.G., Marshall, A.F., Sizemore, J.T., Chen, Z.J., Eckstein, J.N., Bozovic, I., von Dessonneck, K.E., Harris, J.S. Jr., and Bravman, J.C., submitted to J. Crystal Growth.Google Scholar
2 Berkley, D.D., Johnson, B.R., Anand, N., Beauchamp, K.M., Conroy, L.E., Goldman, A.M., Maps, J., Mauersberger, K., Mecartney, M.L., Morton, J., Tuominen, M., and Zhang, Y‐J., Appl. Phys. Lett. 53,1973 (1988).Google Scholar
3 Nakayama, Y., Ochimizu, H., Maeda, A., Kawazu, A., Uchinokura, K., and Tanaka, S., Jpn. J. Appl. Phys. 28, L1217 (1989).Google Scholar
4 Bormann, R. and Nolting, J., to be published in Physica C.Google Scholar