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Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H

Published online by Cambridge University Press:  10 February 2011

G. Ganguly ,
T. Ikeda ,
I. Sakata  and
A. Matsuda
G. Ganguly
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
T. Ikeda
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
I. Sakata
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
A. Matsuda
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
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Abstract

We have previously shown that the carrier drift mobility in amorphous silicon can be enhanced by optimizing the ion-bombardment energy during growth on conducting substrates. However, there exists a lack of reproducibility of samples exhibiting high mobility which we attribute to the rf field induced fluctuation of the plasma potential in a conventional (Te ≈ 2eV) silane plasma. Here we introduce an enclosed plasma configuration that allows us to confine the effect of the rf field and therefore obtain a low-electron-temperature (Te ≈ 0.1 eV) silane plasma as determined from Langmuir probe measurements. The measured ion-energy distributions correlate with those for electrons and the mean ion-energy can be controlled by biasing the substrate which allows us to reproducibly fabricate high drift mobility amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 347
Copyright
Copyright © Materials Research Society 1996

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References

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