Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-08T02:36:18.666Z Has data issue: false hasContentIssue false
  • English
  • Français

Modifications of Molybdenum-Disulphide Films by Ion-Bombardment Techniques

Published online by Cambridge University Press:  28 February 2011

Niels JØrgen Mikkelsen  and
Gunnar SØrensen
Niels JØrgen Mikkelsen
Affiliation:
Institute of Physics, Universityof Aarhus DK-8000 Aarhus C, Denmark
Gunnar SØrensen
Affiliation:
Institute of Physics, Universityof Aarhus DK-8000 Aarhus C, Denmark
Get access

Abstract

The present paper reports on the structural and tribological studies of MoSx films in the thickness range of 3-4000 Å bombarded with inert-gas ions in the hundred-keV energy range. It has been shown that it is possible to amorphize MoS1.8 crystalline films with 400-keV Ar ions at a dose of lxl016 ions/cm2 Contrary to previous studies, there is evidence for both a lowfriction coefficient and an increased sliding life of sputtered MoSx films when amorphized by the ion-bombardment technique. The paper will discuss the influence of ion dose and tribological differences between bombarded and nonbombarded MoSx films. With the availability ofhigh-intensity ion beams in the mA range, the possibility of a direct ion synthesis of a molybdenum surface with high-intensity sulphur-ion beams will be discussed, and friction measurements of these systems will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 265
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Chevallier, J., Olesen, S., Sorensen, G., and Gupta, B., Appl. Phys.Lett. 48, 876 (1986)Google Scholar
2) Kobs, K., Dimigen, H., HObsch, H., Tolle, H.J., Leutenecker, R., and Ryssel, H., Mat.Sci.Eng. 90, 261 (1987)CrossRefGoogle Scholar
3) Mikkelsen, N.J., Chevallier, J., Sorensen, G., and Strade, C.A., Appl.Phys.Lett. 52, 1130 (1988)Google Scholar
4) Buck, V., Wear 114, 263 (1987)Google Scholar
5) Spalvins, T., J.Vac.Sci.Technol.A 5, 212 (1987)Google Scholar
6) Dimigen, H., Kobs, K., Leutenecker, R., Ryssel, H., and Eichinger, P., Mat.Sci.Eng. 69, 181 (1985)Google Scholar
7) Ziegler, J.F., Biersack, J.P., and Littmark, U., in: The Stopping and Range of Ions in Solids 1, ed. Ziegler, J.F. (Pergamon Press, NY, 1987)Google Scholar
8) Lince, J.P. and Fleischauer, P.D., J.Mater.Res. 2, 827 (1987)Google Scholar
9) Dimigen, H., HUbsch, H., Willich, P., and Reichelt, K., Thin Solid Films 129, 79 (1985)CrossRefGoogle Scholar
10) Roberts, E.W., Proc. XX American Mechanisms Symp., NASA Lewis Research Center, Cleveland, OH (May 1986) p. 103 Google Scholar
11) Mikkelsen, N.J. and Sorensen, G., Proc. SMMIB, Italy, Sept. 1988 Google Scholar
12) Kobs, K., private commun.Google Scholar
13) Fleischauer, P.D. and Bauer, R., Tribology Trans. 31, 239 (1987)Google Scholar