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Modification of Cu(In, Ga)Se2 Surface by Treatment in Cadmium Solutions

Published online by Cambridge University Press:  01 February 2011

Q. Nguyen ,
G. Bilger ,
U. Rau  and
H.W. Schock
Q. Nguyen
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
G. Bilger
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
U. Rau
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
H.W. Schock
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

This article investigates chemical modifications of Cu(In, Ga)Se2 thin film by treatment in cadmium solutions with varying [NH3] concentration. Secondary ions mass spectroscopy and Xray photoelectron-spectroscopy analysis show that Cd-diffusion into the Cu(In, Ga)Se2 film is intimately tied to the reduction-oxidation of the Cu(In, Ga)Se2 surface, which is controlled by the [NH3] concentration. Reaction products, like Se and metal hydroxides of the redox process as wellas thediffusedCdinCu(In, Ga)Se2 film, result in degradation of solar cell performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B8.17
Copyright
Copyright © Materials Research Society 2003

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