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Modeling the Laser Scanned Photodiode S-shaped J-V Characteristic.

Published online by Cambridge University Press:  01 February 2011

Miguel Fernandes ,
Manuela Vieira  and
Rodrigo Martins
Miguel Fernandes
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, 1, Lisbon, 1949-014, Portugal
Manuela Vieira
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, 1, Lisbon, 1949-014, Portugal
Rodrigo Martins
Affiliation:
[email protected], FCT-UNL, Materials Science Dept., Campus da FCT-UNL, Quinta da torre,, Lisbon, 2825 Monte da Caparica,, Portugal
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Abstract

The devices analyzed in this work present an S-shape J-V characteristic when illuminated. By changing the light flux a non linear dependence of the photocurrent with illumination is observed. Thus a low intensity light beam can be used to probe the local illumination conditions, since a relationship exists between the probe beam photocurrent and the steady state illumination. Numerical simulation studies showed that the origin of this S-shape lies in a reduced electric field across the intrinsic region, which causes an increase in the recombination losses. Based on this, we present a model for the device consisting of a modulated barrier recombination junction in addition to the p-i-n junction. The simulated results are in good agreement with the experimental data.

Using the presented model a good estimative of the LSP signal under different illumination conditions can be obtained, thus simplifying the development of applications using the LSP as an image sensor, with advantages over the existing imaging systems in the large area sensor fields with the low cost associated to the amorphous silicon technology.

Keywords

optoelectronicsensorsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-03
Copyright
Copyright © Materials Research Society 2007

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References

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